959 research outputs found

    Searches for vector-like quarks at future colliders and implications for composite Higgs models with dark matter

    Get PDF
    Many composite Higgs models predict the existence of vector-like quarks with masses outside the reach of the LHC, e.g. mQ 73 2 TeV, in particular if these models contain a dark matter candidate. In such models the mass of the new resonances is bounded from above to satisfy the constraint from the observed relic density. We therefore develop new strategies to search for vector-like quarks at a future 100 TeV collider and evaluate what masses and interactions can be probed. We find that masses as large as 3c 6.4 ( 3c9) TeV can be tested if the fermionic resonances decay into Standard Model (dark matter) particles. We also discuss the complementarity of dark matter searches, showing that most of the parameter space can be closed. On balance, this study motivates further the consideration of a higher-energy hadron collider for a next generation of facilities

    Structural, Optical and Electrical Properties of NiO Nanostructure Thin Film

    Get PDF
    Nickel oxide was deposited on highly cleaned glass substrates using spray pneumatic technique. The effect of precursor molarity on structural, optical and electrical properties has been studied. The XRD lines of the deposited NiO were enhanced with increasing precursor molarity due to the improvement of the films crystallinity. It was shown that the crystalline size of the deposited thin films was calculated using Debye-Scherer formula and found in the range between 9 and 47 nm. The optical properties have been discussed in this work. The absorbance (A), the transmittance (T) and the reflectance (R) were measured and calculated. Band gap energy is considered one of the most important optical parameter, therefore measured and found ranging between 3.64 and 3.86 eV. The NiO thin film reduces the light reflection for visible range light. The increase of the electrical conductivity to maximum value of 0.0896 (Ω cm) – 1 can be explained by the increase in carrier concentration of the films. A good electrical conductivity of the NiO thin film is obtained due to the electrically low sheet resistance. NiO can be applied in different electronic and optoelectronic applications due to its high band gap, high transparency and good electrical conductivity

    Effect of Annealing in Physical Properties of NiO Nanostructure Thin Film

    Get PDF
    Nickel oxide was deposited on highly cleaned glass substrates using spray pneumatic technique. The effect of precursor molarity on structural, optical and electrical properties has been studied. The XRD lines of the deposited NiO were enhanced with increasing precursor molarity due to the improvement of the films crystallinity. It was shown that the average of the crystalline size of the deposited thin films was calculated using Debye–Scherer formula and found 46.62 for as-deposited sample and 119.89 nm for the annealed one. The optical properties have been discussed in this work. The absorbance (A), the transmittance (T) and the reflectance (R) were measured and calculated. Band gap energy is considered one of the most important optical parameter, therefore measured and found ranging ranging 3.64 for as-deposited sample and 2.98 eV for the annealed one. The NiO thin film reduces the light reflection for visible range light. The increase of the electrical conductivity to maximum value of 0.09241 (Ωcm)−1 can be explained by the increase in carrier concentration of the films. A good electrical conductivity of the NiO thin film is obtained due to the electrically low sheet resistance. NiO can be applied in different electronic and optoelectronic applications due to its high band gap, high transparency and good electrical conductivity

    Structural, Optical and Electrical Properties of NiO Nanostructure Thin Film

    Get PDF
    Nickel oxide was deposited on highly cleaned glass substrates using spray pneumatic technique. The effect of precursor molarity on structural, optical and electrical properties has been studied. The XRD lines of the deposited NiO were enhanced with increasing precursor molarity due to the improvement of the films crystallinity. It was shown that the crystalline size of the deposited thin films was calculated using Debye-Scherer formula and found in the range between 9 and 47 nm. The optical properties have been discussed in this work. The absorbance (A), the transmittance (T) and the reflectance (R) were measured and calculated. Band gap energy is considered one of the most important optical parameter, therefore measured and found ranging between 3.64 and 3.86 eV. The NiO thin film reduces the light reflection for visible range light. The increase of the electrical conductivity to maximum value of 0.0896 (Ω cm) – 1 can be explained by the increase in carrier concentration of the films. A good electrical conductivity of the NiO thin film is obtained due to the electrically low sheet resistance. NiO can be applied in different electronic and optoelectronic applications due to its high band gap, high transparency and good electrical conductivity

    Effect of Iron Doping on Physical Properties of NiO Thin Films

    Get PDF
    Nickel-iron oxide was deposited on highly cleaned glass substrates using spray pneumatic technique. The effect of iron percentage on structural, optical and electrical properties has been studied. The crystalline size of the deposited thin films was calculated using Debye-Scherer formula and found in the range between 8.8 and 27.6 nm. The optical properties have been discussed in this work. The absorbance (A), the transmittance (T) and the reflectance (R) were measured and calculated. Band gap energy is considered one of the most important optical parameter, therefore measured and found ranging between 3.81 and 3.98 eV. The NiO:Fe thin film reduces the light reflection for visible range light. The increase of the electrical conductivity to maximum value of 0.470 10 – 4 (Ω cm) – 1 for 6 % Fe can be explained by the increase in carrier concentration of the films. A good electrical conductivity of the NiO:Fe thin film is obtained due to the electrically low sheet resistance. NiO:Fe can be applied in different electronic and optoelectronic applications due to its high band gap, high transparency and good electrical conductivity

    Heterostructured composite of NiFe-LDH nanosheets with Ti4O7 for oxygen evolution reaction

    Get PDF
    Developing oxygen evolution reaction (OER) electrocatalyst based on earth-abundant materials holds great promise for ascertaining water-splitting to surmount its deprived kinetics. In this regard, NiFe-LDH (layered double hydroxide) receives considerable attention owing to their layered structure. However, they still suffer from poor electronic conductivity and structural stability. We combined NiFe-LDH nanosheets with Magnéli phase Ti4O7 into a heterostructured composite. A series of analyses reveal that decorating Ti4O7 facilitates charge transfer to enhance the conductivity of NiFe-LDH-Ti4O7. During electrochemical measurement, Ni2+ is transformed to metastable Ni3+ (Ni (OH)→ NiOOH) before the OER onset potential. Thus, the presence of Ni3+ as the main active sites could improve the chemisorption of OH− to facilitate OER. As a result, the NiFe-LDH-Ti4O7 catalyst delivers as low as onset potential (1.43 V). Combining the holey structure (NiFe-LDH and Ti4O7) and the defect engineering generated on NiFe-LDH-Ti4O7 as a synergistic effect improves the OER performance. The inclusion of Ti4O7 in the composite leads to more vacancy sites, as evidenced by the extended X-ray absorption fine structure (EXAFS) analysis. The obtained defective structure with a low coordination environment would improve the electronic conductivity and facilitate the adsorption process of H2O onto metal cations, thereby increasing the intrinsic catalytic activity of NiOOH. The strong coupling of NiFe-LDH and Ti4O7 also increases the stability, and the heterostructured composite helps maintain the structural robustness of the LDH

    Single Vectorlike Quark Production at the LHC

    Full text link
    A gluon resonance G of mass below 1 TeV could be the origin of the t\bar{t} forward-backward asymmetry observed at the Tevatron provided that new decay modes G->\bar{q}Q, with q a standard quark and Q its massive excitation, make G broad enough. We consider all the different cases, with q the top, the bottom or a light quark and dominant decay modes Q->Wq' or Q->Zq. We show that current experimental searches are unable to probe the model, but that minimal departures from these analyses can explore a large region of its parameter space for the current LHC luminosity. This includes the challenging case with the new quarks decaying mostly into light quark flavors. In some channels not only the heavy quark but also the massive gluon can be reconstructed, which would stablish the origin of the t\bar{t} asymmetry. Similar analyses can be applied to more general models with new massive gluons and vectorlike quarks.Comment: 17 pages, 8 figures. Version 2: references adde
    corecore